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Dependence of Curie temperature on surface strain in InMnAs epitaxial structures

Identifieur interne : 004500 ( Main/Repository ); précédent : 004499; suivant : 004501

Dependence of Curie temperature on surface strain in InMnAs epitaxial structures

Auteurs : RBID : Pascal:10-0351641

Descripteurs français

Pascal (Inist)
- Point Curie, Déformation mécanique, Autoassemblage, Point quantique, Couche épitaxique, Semiconducteur magnétique, Croissance film, Méthode MOVPE, Moment magnétique, Mécanisme croissance, Arséniure d'indium, Frange moiré, Microscopie électronique transmission, Arséniure de manganèse, Composé ternaire, 7575, 8115K, 8107T.

English descriptors

KwdEn :
- Curie point, Epitaxial layers, Film growth, Growth mechanism, Indium arsenides, MOVPE method, Magnetic moments, Magnetic semiconductors, Manganese arsenides, Moire fringes, Quantum dots, Self-assembly, Strains, Ternary compounds, Transmission electron microscopy.

Abstract

Pairs of self-assembled InMnAs quantum dot structures and reference epitaxial layers (0 < x < 0.13) were prepared on GaAs substrates by low-pressure metal organic vapour phase epitaxy. Magnetic moment measurements indicated that reference epitaxial layer had a Curie temperature of 343 K independent on the composition. On the other hand, the quantum dots prepared under Stranski-Krastanov growth mode from the identical gas phase composition showed a lower value of Curie temperature. This value varied from 41 to 235 K in relation to the material composition. Moiré fringes at transmission electron microscopy plan view were used for characterization of strain in InMnAs quantum dot structures.

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<term>Indium arsenides</term>
<term>MOVPE method</term>
<term>Magnetic moments</term>
<term>Magnetic semiconductors</term>
<term>Manganese arsenides</term>
<term>Moire fringes</term>
<term>Quantum dots</term>
<term>Self-assembly</term>
<term>Strains</term>
<term>Ternary compounds</term>
<term>Transmission electron microscopy</term>
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<term>Déformation mécanique</term>
<term>Autoassemblage</term>
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<term>Semiconducteur magnétique</term>
<term>Croissance film</term>
<term>Méthode MOVPE</term>
<term>Moment magnétique</term>
<term>Mécanisme croissance</term>
<term>Arséniure d'indium</term>
<term>Frange moiré</term>
<term>Microscopie électronique transmission</term>
<term>Arséniure de manganèse</term>
<term>Composé ternaire</term>
<term>7575</term>
<term>8115K</term>
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<front><div type="abstract" xml:lang="en">Pairs of self-assembled InMnAs quantum dot structures and reference epitaxial layers (0 < x < 0.13) were prepared on GaAs substrates by low-pressure metal organic vapour phase epitaxy. Magnetic moment measurements indicated that reference epitaxial layer had a Curie temperature of 343 K independent on the composition. On the other hand, the quantum dots prepared under Stranski-Krastanov growth mode from the identical gas phase composition showed a lower value of Curie temperature. This value varied from 41 to 235 K in relation to the material composition. Moiré fringes at transmission electron microscopy plan view were used for characterization of strain in InMnAs quantum dot structures.</div>
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Dependence of Curie temperature on surface strain in InMnAs epitaxial structures

Dependence of Curie temperature on surface strain in InMnAs epitaxial structures

Descripteurs français

English descriptors

Abstract

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